中波红外焦平面凝视电路系统的设计与实现

介绍了针对上海技术物理研究所研制的碲镉汞中波红外焦平面器件而设计的凝视电路系统,功能包括模拟信号的采集、调理、模数转换、数据编排、USB接口等。该系统以计算机为终端,配合光学系统和软件,进行了外场远目标成像试验,并对图像进行了非均匀性校正等处理。     

Hg_(1-x)Cd_xTe反型层子能带结构的实验研究

本文在4.2K下测定了液相外延HgCdTe MIS结构样品的电容谱,磁阻振荡以及迴旋共振效应,并从实验测量结果,采用物理参数拟合法,确定了该样品在电量子限条件下反型层电子子能带结构,包括基态子能带能量E_o、费密能级E_F,子能带电子有效质量m~*(E_F)、m~*(E_o)、反型层平均厚度Z_i、耗尽层厚度Z_d,以及它们随子能带电子浓度N_s的变化。     

On the influence of light on dislocation motion in compound semiconductors

The influence of light on dislocation motion and the associated flow stress is examined for CdS and (Hg_0.3Cd_0.7)Te semiconductors. For CdS, a large increase in flow stress is observed for slip on the basal planes during irradiation. In contrast, (Hg_0.3Cd_0.7)Te exhibits a smaller photoplastic effect with a time delay. Results of experiments on the effect of light, slip direction, strain rate, and temperature are presented with emphasis on CdS. Possible mechanisms of photoplasticity, along with methods of exploiting the photoplastic effect to reduce dislocation densities in semiconductor devices, are also discussed.     

利用二次阳极氧化方法降低N型碲镉汞材料表面复合速度

利用微波反射光电导衰退法比较了采用一次阳极氧化和二次阳极氧化的N型碲镉汞材料的非平衡载流子寿命及其随温度的变化,通过与理论值进行比较拟合得到了碲镉汞材料表面复合速度随温度的变化曲线.结果发现,二次阳极氧化方法能够更好地降低材料表面悬挂键的密度,同时减少抛光引入的表面缺陷能级的数量,从而降低材料的表面复合速度,改善材料的非平衡载流子寿命,利于制造出高性能的HgCdTe红外探测器.     

碲镉汞长波探测器暗电流仿真分析

针对n-on-p型长波Hg1-x Cdx Te红外探测器的暗电流进行建模分析,分析了不同机制对暗电流的影响,仿真分析结果和实际结果能够较好地匹配。得出探测器的工作状态暗电流Idark=9×10-10 A,工作电阻Rr=109Ω,品质因子R0A=20Ωcm2。从仿真分析结果得出,在现有工艺下,Shockley-Read-Hall(SRH)复合和表面漏电是影响暗电流的最主要的非本征因素,其中SRH复合速率为2×1016/s·cm3,当表面态到达1×1012 cm-2,器件会出现严重的表面沟道。     

碲镉汞红外探测器的前沿技术综述

红外光电探测器件在军事、民用和科学研究方面具有非常重要的应用。而碲镉汞(HgCdTe)由于自身的诸多优点在红外光电探测器的发展中起到了至关重要的作用,至今仍然是重要的战略战术应用中首选的材料体系。首先分析了针对新一代红外探测器所提出的SWaP3(Size,Weight,and Power,Performance and Price)概念,然后简略介绍了第三代红外焦平面研究背景下HgCdTe薄膜的衬底水平与材料生长情况,最后总结了大规模阵列器件、甚长波红外器件、高工作温度(High Operating Temperature,HOT)器件、超光谱探测器件、双色器件以及雪崩光电器件等前沿技术方面的研究进展。     

锂离子电池硅基负极材料粘结剂的研究进展

综述了硅基负极材料粘结剂的研究进展。重点论述了羧甲基纤维素钠(CMC)、聚丙烯酸(PAA)、海藻酸钠和导电聚合物等粘结剂在硅基负极材料中的应用。比较了不同类型粘结剂的优缺点,展望了硅基负极材料粘结剂的发展方向。     

ICP刻蚀HgCdTe表面的微区XPS分析

文章将ICP刻蚀技术应用于刻蚀HgCdTe,使用微区X射线光电子光谱学(XPS) 、扫描电子显微镜( SEM)等表面分析技术研究了ICP各工艺参数,包括ICP功率、气体成分与配比、腔体压力等对刻蚀表面形貌、刻蚀后表面成分、聚合物形成的影响。XPS分析结果发现,使用光刻胶作掩模时,刻蚀气体CH4 会与光刻胶发生反应,生成物可能为C6H5 (CH3 ) 。如果腔体压力较高,生成物不能及时被带走,就会附着在样品表面上,使样品表面发黑;当腔体压力较低时,生成物被及时带走,则样品表面光亮,无聚合物残留。光刻胶也会与H2 发生反应,生成多种含C有机物。SiO2 作掩模时,在一定的条件下, CH4 会与SiO2 或者真空硅脂发生反应,生成聚脂薄膜。     

Design and development of multicolor MWIR/LWIR and LWIR/VLWIR detector arrays

Multicolor infrared (IR) focal planes are required for high-performance sensor applications. These sensors will require multicolor focal plane arrays (FPAs) that will cover various wavelengths of interest in mid wavelength infrared/long wavelength infrared (MWIR/LWIR) and long wavelength infrared/very long wavelength infrared (LWIR/VLWIR) bands. There has been significant progress in HgCdTe detector technology for multicolor MWIR/LWIR and LWIR/VLWIR FPAs.^1–3 Two-color IR FPAs eliminate the complexity of multiple single-color IR FPAs and provide a significant reduction of weight and power in simpler, reliable, and affordable systems. The complexity of a multicolor IR detector MWIR/LWIR makes the device optimization by trial and error not only impractical but also merely impossible. Too many different geometrical and physical variables need to be considered at the same time. Additionally, material characteristics are only relatively controllable and depend on the process repeatability. In this context, the ability of performing “simulation experiments” where only one or a few parameters are carefully controlled is paramount for a quantum improvement of a new generation of multicolor detectors for various applications.     

Molecular beam epitaxy growth of high-quality HgCdTe LWIR layers on polished and repolished CdZnTe substrates

We report here molecular beam epitaxy (MBE) mercury cadmium telluride (HgCdTe) layers grown on polished and repolished substrates that showed state-of-the-art optical, structural, and electrical characteristics. Many polishing machines currently available do not take into account the soft semiconductor materials, CdZnTe (CZT) being one. Therefore, a polishing jig was custom designed and engineered to take in account certain physical parameters (pressure, substrate rotational frequency, drip rate of solution onto the polishing pad, and polishing pad rotational velocity). The control over these parameters increased the quality, uniformity, and the reproducibility of each polish. EPIR also investigated several bromine containing solutions used for polishing CZT. The concentration of bromine, as well as the mechanical parameters, was varied in order to determine the optimal conditions for polishing CZT.